Title :
High-efficiency 20 watt S/C-band power amplifier MMIC
Author :
Komiak, J.J. ; Helms, D.
Author_Institution :
General Electric, Syracuse, NY, USA
Abstract :
The design and performance of a two-stage MMIC (monolithic microwave integrated circuit) power amplifier that has established new benchmarks for power output, bandwidth, and efficiency are reported. The amplifier produces 22 W+or-1.4 dB from 3.0 to 6.0 GHz, with a maximum power output of 29 W, a minimum of 15 W, an associated power gain of 10 to 13.5 dB, and a power-added efficiency of 23% to 35%. The results rival the best narrowband results reported using multiple discrete MESFET cells in a hybrid MIC internally matched format. This excellent performance can be attributed to an accurate device model, a comprehensive design methodology, a robust matching circuit topology, and a high-yield/high-performance power MMIC processes.<>
Keywords :
MMIC; microwave amplifiers; power amplifiers; 10 to 35 dB; 15 to 29 W; 23 to 35 percent; 3.0 to 6.0 GHz; C-band; MMIC; S-band; device model; matching circuit topology; power amplifier; power output; Bandwidth; Design methodology; High power amplifiers; MESFETs; MMICs; Microwave amplifiers; Microwave integrated circuits; Monolithic integrated circuits; Narrowband; Power amplifiers;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1992. Technical Digest 1992., 14th Annual IEEE
Conference_Location :
Miami Beach, FL, USA
Print_ISBN :
0-7803-0773-9
DOI :
10.1109/GAAS.1992.247194
