Graphene junction field-effect transistor

Summary form only given. Graphene is known for its high carrier mobility and high saturation velocity . The majority of graphene transistors in the literature-including MOSFETs, barristors, and tunneling FETs-have a gate separated from the channel by a conventional or high-K dielectric layer. In this paper we demonstrate for the first time a lateral graphene FET gated by a graphene/semiconductor heterojunction. The device consists of a p-type graphene channel and an n-type semiconductor gate. Since no metal/dielectric-stacked gate is used, the device is referred to as graphene junction FET (G-JFET). Such a device is of interest as an alternate to G-MOSFETs, or as a back gate for G-MOSFETs with the feature that the device´s Dirac voltage (V_Dirac) can be tuned by the doping density of semiconductor gate. This G-JFET device demonstrates for the first time the feasibility of using a graphene/n-semiconductor Schottky junction as the gate mechanism to control the conductivity of a graphene channel. The Schottky-junction back gate of a G-JFET also provides an additional degree of freedom to tune the V_Dirac of each individual transistor by doping specific regions underneath the graphene channel.