SPDT switch MMIC using E/D-mode GaAs JFETs for personal communications

Author

Kusunoki, S. ; Ohgihara, T. ; Wada, M. ; Murakami, Y.

Author_Institution

Sony Corp. Res. Center, Yokohama, Japan

fYear

1997

fDate

4-7 Oct. 1997

Firstpage

135

Lastpage

138

Abstract

The design and performance of a monolithic GaAs SPDT switch applicable to a time division duplexer for personal communications are described. For a switch IC used in a portable handset for personal communications, 3-V battery operation is mandatory. In order to meet this requirement, the IC was realized by utilizing four depletion-mode switch JFETs (junction field effect transistors) with superior pinch-off characteristics, and an enhancement-mode control JFET. An excellent small insertion loss of less than 0.7 dB and a high isolation of 30 dB have been achieved at 1.9 GHz.<>

Keywords

III-V semiconductors; MMIC; gallium arsenide; junction gate field effect transistors; losses; semiconductor switches; telephone sets; 0.7 dB; 1.9 GHz; 3 V; MMIC; battery operation; depletion mode switch JFET; enhancement-mode control JFET; insertion loss; junction field effect transistors; monolithic SPDT switch; personal communications; pinch-off characteristics; portable handset; semiconductors; time division duplexer; Batteries; Communication switching; Communication system control; FET integrated circuits; Gallium arsenide; Insertion loss; JFETs; MMICs; Switches; Telephone sets;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1992. Technical Digest 1992., 14th Annual IEEE

Conference_Location

Miami Beach, FL, USA

Print_ISBN

0-7803-0773-9

Type

conf

DOI

10.1109/GAAS.1992.247206

Filename

247206