Monolithic pulse-doped MESFET LNA for DBS downconverter

Author

Shiga, N. ; Nakajima, S. ; Kuwata, N. ; Otobe, K. ; Sekiguchi, T. ; Matsuzaki, K. ; Hayashi, H.

Author_Institution

Sumitomo Electric Ind. Ltd., Yokohama, Japan

fYear

1997

fDate

4-7 Oct. 1997

Firstpage

127

Lastpage

130

Abstract

A monolithic four-stage low-noise amplifier (LNA) was successfully demonstrated for direct broadcast satellite (DBS) downconverters using 0.3- mu m gate pulse-doped GaAs MESFETs. Voltage standing wave ratios of below 1.5:1 as well as a noise figure of 1.1 dB and a gain of 26 dB at 12 GHz were obtained. In the power characteristics, a 1 dB compression point of 10 dBm and a third-order intercept point of 19 dBm were shown. The design and test results of the LNA are presented.<>

Keywords

MMIC; Schottky gate field effect transistors; direct broadcasting by satellite; field effect integrated circuits; microwave amplifiers; 0.3 micron; 1.1 dB; 12 GHz; 26 dB; DBS downconverter; GaAs; VSWRs; compression point; direct broadcast satellite; four-stage low-noise amplifier; noise figure; power characteristics; pulse-doped GaAs MESFETs; pulse-doped MESFET LNA; third-order intercept point; Circuit noise; Distributed parameter circuits; FETs; Integrated circuit noise; Low-noise amplifiers; MESFETs; Noise figure; Pulse amplifiers; Satellite broadcasting; Transmission lines;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1992. Technical Digest 1992., 14th Annual IEEE

Conference_Location

Miami Beach, FL, USA

Print_ISBN

0-7803-0773-9

Type

conf

DOI

10.1109/GAAS.1992.247208

Filename

247208