Title :
GaAs MMICs for an integrated GPS front-end
Author :
Benton, R. ; Nijjar, M. ; Woo, C. ; Podell, A. ; Horvath, G. ; Wilson, E. ; Mitchell, S.
Author_Institution :
Pacific Monolithics, Sunnyvale, CA, USA
Abstract :
A complete, integrated GPS (Global Positioning System) front-end comprising five GaAs monolithic microwave integrated circuits (MMICs) has been designed, fabricated, and tested. Two of these MMICs are described in detail. Both chips represent high level of complexity, combining both low-power RF and digital circuitry. The first MMIC is a low-noise amplifier with two L-band RF inputs and two outputs, with 28 dB gain and 2.7 dB noise figure at 100 degrees C, and less than 200-mW power dissipation. The second MMIC is a dual-input downconverter consisting of a cascade of two RF attenuator/amplifier sections, followed by a mixer, and has approximately 26-dB gain.<>
Keywords :
III-V semiconductors; MMIC; frequency convertors; gallium arsenide; microwave amplifiers; radionavigation; satellite relay systems; 100 degC; 2.7 dB; 26 dB; 28 dB; GaAs; GaAs monolithic microwave integrated circuits; Global Positioning System; L-band RF inputs; RF attenuator/amplifier sections; complexity; digital circuitry; dual-input downconverter; integrated GPS front-end; low-noise amplifier; low-power RF circuits; mixer; power dissipation; Circuit testing; Gallium arsenide; Global Positioning System; Integrated circuit testing; Low-noise amplifiers; MMICs; Microwave integrated circuits; Monolithic integrated circuits; Radio frequency; System testing;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1992. Technical Digest 1992., 14th Annual IEEE
Conference_Location :
Miami Beach, FL, USA
Print_ISBN :
0-7803-0773-9
DOI :
10.1109/GAAS.1992.247209
