GaAs MMICs for an integrated GPS front-end

Author

Benton, R. ; Nijjar, M. ; Woo, C. ; Podell, A. ; Horvath, G. ; Wilson, E. ; Mitchell, S.

Author_Institution

Pacific Monolithics, Sunnyvale, CA, USA

fYear

1997

fDate

4-7 Oct. 1997

Firstpage

123

Lastpage

126

Abstract

A complete, integrated GPS (Global Positioning System) front-end comprising five GaAs monolithic microwave integrated circuits (MMICs) has been designed, fabricated, and tested. Two of these MMICs are described in detail. Both chips represent high level of complexity, combining both low-power RF and digital circuitry. The first MMIC is a low-noise amplifier with two L-band RF inputs and two outputs, with 28 dB gain and 2.7 dB noise figure at 100 degrees C, and less than 200-mW power dissipation. The second MMIC is a dual-input downconverter consisting of a cascade of two RF attenuator/amplifier sections, followed by a mixer, and has approximately 26-dB gain.<>

Keywords

III-V semiconductors; MMIC; frequency convertors; gallium arsenide; microwave amplifiers; radionavigation; satellite relay systems; 100 degC; 2.7 dB; 26 dB; 28 dB; GaAs; GaAs monolithic microwave integrated circuits; Global Positioning System; L-band RF inputs; RF attenuator/amplifier sections; complexity; digital circuitry; dual-input downconverter; integrated GPS front-end; low-noise amplifier; low-power RF circuits; mixer; power dissipation; Circuit testing; Gallium arsenide; Global Positioning System; Integrated circuit testing; Low-noise amplifiers; MMICs; Microwave integrated circuits; Monolithic integrated circuits; Radio frequency; System testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1992. Technical Digest 1992., 14th Annual IEEE

Conference_Location

Miami Beach, FL, USA

Print_ISBN

0-7803-0773-9

Type

conf

DOI

10.1109/GAAS.1992.247209

Filename

247209