Title :
Advances in CPW-design applied to monolithic integrated Ka-band MESFET and HEMT-amplifiers on GaAs
Author :
Kosslowski, S. ; Bertenburg, R. ; Koster, N.H.L. ; Wolff, I. ; Tegude, F.-J. ; Narozny, P. ; Wenger, J. ; Dambkes, H.
Author_Institution :
Daimler Benz Res. Centre, Ulm, Germany
Abstract :
Two Ka-band amplifiers in coplanar waveguide (CPW) technology are presented. The four-stage design is based on 0.3- mu m MESFETs, whereas in the three-stage amplifier 0.25- mu m high-electron-mobility transistors (HEMTs) are used. The monolithic microwave integrated circuits (MMICs) are designed for a gain of 20 dB. The authors present the realized MMICs and in particular the way in which typical difficulties arising from transforming theoretical demands into a coplanar circuit layout can be overcome. The applicability and accuracy of the developed design procedures are demonstrated by comparison of simulated and measured results.<>
Keywords :
III-V semiconductors; MMIC; Schottky gate field effect transistors; field effect integrated circuits; gallium arsenide; high electron mobility transistors; microwave amplifiers; 0.25 micron; 0.3 micron; 20 dB; Ka-band amplifiers; MESFETs; coplanar circuit layout; coplanar waveguide; design procedures; four-stage design; high-electron-mobility transistors; monolithic microwave integrated circuits; three-stage amplifier; Circuit simulation; Coplanar waveguides; Gain; HEMTs; Integrated circuit technology; MESFETs; MMICs; MODFETs; Microwave integrated circuits; Monolithic integrated circuits;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1992. Technical Digest 1992., 14th Annual IEEE
Conference_Location :
Miami Beach, FL, USA
Print_ISBN :
0-7803-0773-9
DOI :
10.1109/GAAS.1992.247210
