39.5-GHz static frequency divider implemented in AlInAs/GaInAs HBT technology

Author

Jensen, J.F. ; Hafizi, Muhd ; Stanchina, W.E. ; Metzger, R.A. ; Rensch, D.B.

Author_Institution

Hughes Res. Lab., Malibu, CA, USA

fYear

1997

fDate

4-7 Oct. 1997

Firstpage

101

Lastpage

104

Abstract

A static divide-by-four frequency divider operating at 39.5-GHz input frequency is reported. Graded emitter-base junction AlInAs/GaInAs heterojunction bipolar transistor (HBT) technology lattice-matched to InP substrates has been used to implement the divider. The graded junction HBTs feature unity gain cutoff frequency and maximum frequency of oscillation of 130 GHz and 91 GHz, respectively. The devices have a very low turn-on voltage of about 0.7 V at collector current density of 5*10/sup 4/ A/cm/sup 2/. The divider operated at a power supply voltage of -3 V and consumes a total DC power of 425 mW, corresponding to 77 mW per flip-flop.<>

Keywords

III-V semiconductors; aluminium compounds; bipolar integrated circuits; dividing circuits; frequency dividers; gallium arsenide; heterojunction bipolar transistors; indium compounds; -3 V; 0.7 V; 130 GHz; 39.5 GHz; 425 mW; 91 GHz; AlInAs-GaInAs; HBT technology; InP; collector current density; divide-by-four frequency divider; graded emitter-base function; maximum frequency of oscillation; power supply voltage; static frequency divider; total DC power; turn-on voltage; unity gain cutoff frequency; Cutoff frequency; Flip-flops; Frequency conversion; Gallium arsenide; Heterojunction bipolar transistors; Indium phosphide; Lattices; Power dissipation; Substrates; Thermal conductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1992. Technical Digest 1992., 14th Annual IEEE

Conference_Location

Miami Beach, FL, USA

Print_ISBN

0-7803-0773-9

Type

conf

DOI

10.1109/GAAS.1992.247213

Filename

247213