DocumentCode
33885
Title
Design and Analysis of 3D-MAPS (3D Massively Parallel Processor with Stacked Memory)
Author
Dae Hyun Kim ; Athikulwongse, K. ; Healy, M.B. ; Hossain, M.M. ; Moongon Jung ; Khorosh, I. ; Kumar, G. ; Young-Joon Lee ; Lewis, D.L. ; Tzu-Wei Lin ; Chang Liu ; Panth, S. ; Pathak, M. ; Minzhen Ren ; Guanhao Shen ; Taigon Song ; Dong Hyuk Woo ; Xin Zhao
Author_Institution
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
Volume
64
Issue
1
fYear
2015
fDate
Jan. 2015
Firstpage
112
Lastpage
125
Abstract
This paper describes the architecture, design, analysis, and simulation and measurement results of the 3D-MAPS (3D massively parallel processor with stacked memory) chip built with a 1.5 V, 130 nm process technology and a two-tier 3D stacking technology using 1.2 microm-diameter, 6 micro m-height through-silicon vias (TSVs) and 3.4nbspmicrom-diameter face-to-face bond pads. 3D-MAPS consists of a core tier containing 64 cores and a memory tier containing 64 memory blocks. Each core communicates with its dedicated 4KB SRAM block using face-to-face bond pads, which provide negligible data transfer delay between the core and the memory tiers. The maximum operating frequency is 277 MHz and the maximum memory bandwidth is 70.9 GB/s at 277 MHz. The peak measured memory bandwidth usage is 63.8 GB/s and the peak measured power is approximately 4 W based on eight parallel benchmarks.
Keywords
parallel processing; storage management; 3D massively parallel processor with stacked memory; 3D-MAPS; face-to-face bond pads; frequency 277 MHz; parallel benchmarks; power 4 W; two-tier 3D stacking technology; Bandwidth; Multicore processing; Three-dimensional displays; Through-silicon vias; 3D Multiprocessor-memory stacked systems; 3D integrated circuits; Computer-aided design; RTL implementation and simulation;
fLanguage
English
Journal_Title
Computers, IEEE Transactions on
Publisher
ieee
ISSN
0018-9340
Type
jour
DOI
10.1109/TC.2013.192
Filename
6616546
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