A planar heterostructure diode W-band mixer using monolithic balanced integrated approach on InP

Author

Kwon, Y. ; Pavlidis, D. ; Marsh, P. ; Ng, G.I. ; Brock, T.

Author_Institution

Michigan Univ., Ann Arbor, MI, USA

fYear

1997

fDate

4-7 Oct. 1997

Firstpage

67

Lastpage

70

Abstract

The design, fabrication, and experimental characteristics of a balanced InAlAs/InGaAs heterostructure diode mixer are presented. The mixer is monolithically integrated on InP substrates and shows a minimum conversion loss of 12.4 dB with a 91 GHz LO (local oscillator) drive of 12 dBm and an IF (intermediate frequency) of 2 GHz. A reasonably flat RF response has been found from 86.5 GHz to 95.5 GHz (10% bandwidth). The characteristics of the planar heterostructure diodes are studied, and the impact of their parameters on the mixer conversion loss is investigated. This diode design is the same as for high-electron-mobility transistors (HEMTs) and offers the possibility of easy monolithic integration with FET components as necessary for millimeter-wave modules.<>

Keywords

III-V semiconductors; MMIC; aluminium compounds; gallium arsenide; indium compounds; mixers (circuits); semiconductor diodes; 2 GHz; 86.5 to 95.5 GHz; 91 GHz; FET components; InAlAs-InGaAs; InP; flat RF response; intermediate frequency; millimeter-wave modules; minimum conversion loss; mixer conversion loss; planar heterostructure diode W-band mixer; Diodes; Fabrication; Frequency conversion; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; Local oscillators; MODFETs; Mixers;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1992. Technical Digest 1992., 14th Annual IEEE

Conference_Location

Miami Beach, FL, USA

Print_ISBN

0-7803-0773-9

Type

conf

DOI

10.1109/GAAS.1992.247221

Filename

247221