Theoretical prediction and experimental verification of quantum well electroabsorption modulators with bandwidths exceeding 40 GHz

Author

Khan, M.N. ; Shtengel, G.E. ; Chandrasekhar, S. ; Burrows, E.C. ; Burrus, C.A. ; Sarathy, J. ; Grenko, J.A. ; Vandenberg, J.M. ; Sputz, S.K. ; Geva, M. ; Glew, R.W.

Author_Institution

Lucent Technol., Bell Labs., Holmdel, NJ, USA

Volume

3

fYear

1999

fDate

21-26 Feb. 1999

Firstpage

293

Abstract

We experimentally verify the bandwidth and extinction ratio performance of electroabsorption modulators predicted from our simulation. Modulators with bandwidth exceeding 40 GHz for <2 V DC bias have been demonstrated in InGaAsP-InGaAsP multiple quantum wells.

Keywords

III-V semiconductors; electro-optical modulation; electroabsorption; gallium arsenide; gallium compounds; indium compounds; integrated optics; optical communication equipment; semiconductor device models; semiconductor quantum wells; 2 V; 40 GHz; InGaAsP-InGaAsP; InGaAsP/InGaAsP multiple quantum wells; bandwidth; extinction ratio performance; quantum well electroabsorption modulators; Bandwidth; Chirp modulation; Extinction ratio; High speed optical techniques; Optical devices; Optical materials; Optical modulation; Optical waveguides; Quantum mechanics; Quantum well devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Optical Fiber Communication Conference, 1999, and the International Conference on Integrated Optics and Optical Fiber Communication. OFC/IOOC '99. Technical Digest

Conference_Location

San Diego, CA, USA

Print_ISBN

1-55752-582-X

Type

conf

DOI

10.1109/OFC.1999.768143

Filename

768143