Title :
A W-band monolithic InGaAs/GaAs HEMT Schottky diode image reject mixer
Author :
Ton, T.N. ; Chen, T.H. ; Chang, K.W. ; Wang, H. ; Tan, T.L. ; Dow, G.S. ; Hayashibara, G.M. ; Allen, B. ; Berenz, J.
Author_Institution :
TRW Inc., Redondo Beach, CA, USA
Abstract :
A W-band monolithic image reject mixer (IRM) utilizing pseudomorphic InGaAs/GaAs high-electron-mobility transistor (HEMT) diodes has been developed. The monolithic circuit integrates two single-balanced HEMT Schottky diode mixers, a W-band Lange coupler, and a Wilkinson power divider on one chip. The image reject mixer including an external hybrid IF 90 degrees coupler has a measured conversion loss of less than 11 dB and a 12-16-dB rejection with 10-dBm local oscillator (LO) drive at 94.15 GHz. The success of this monolithic IRM development is attributed to the excellent device performance, the simple circuit topology, and a rigorous design/analysis methodology.<>
Keywords :
III-V semiconductors; MMIC; Schottky-barrier diodes; field effect integrated circuits; gallium arsenide; high electron mobility transistors; indium compounds; mixers (circuits); 94.15 GHz; InGaAs-GaAs; Lange coupler; Schottky diode mixers; W-band; Wilkinson power divider; circuit topology; conversion loss; design/analysis methodology; device performance; external hybrid IF 90 degrees coupler; high-electron-mobility transistor; monolithic image reject mixer; Coupling circuits; Gallium arsenide; HEMTs; Indium gallium arsenide; Integrated circuit measurements; Loss measurement; MODFETs; Power dividers; Schottky diodes; Semiconductor device measurement;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1992. Technical Digest 1992., 14th Annual IEEE
Conference_Location :
Miami Beach, FL, USA
Print_ISBN :
0-7803-0773-9
DOI :
10.1109/GAAS.1992.247222
