Diamond-MESFETs - synthesis and integration

Author

Schwitiers, M. ; Dixon, M.P. ; Tajani, A. ; Twitchen, D.J. ; Coe, S.E. ; El-Haji, H. ; Kubovic, M. ; Neuburger, M. ; Kaiser, A. ; Kohn, E.

Author_Institution

CVD Lab., Element Six Ltd., Ascot

fYear

2005

fDate

6-7 Oct. 2005

Firstpage

1

Lastpage

4

Abstract

We report the utilization of synthetic diamond grown by chemical-vapour-deposition (CVD) for use as metal-semiconductor field-effect-transistors (MESFETs). The lack of a shallow n-type donor means that diamond-based electronic devices are unipolar (p-type). The devices presented in this paper are based on delta-doping. Delta-doping stands for the use of very thin (<5 mm) highly doped (N_A 10²⁰ cm^-3 ) buried layers. This approach poses a huge challenge in terms of synthesis as well as processing. First successful attempts of fully integrating working delta-doped diamond MESFETs are presented

Keywords

Schottky gate field effect transistors; chemical vapour deposition; diamond; semiconductor doping; CVD; chemical-vapour-deposition; delta-doping; diamond-MESFET; diamond-based electronic devices; metal-semiconductor field-effect-transistors; Chemical vapor deposition; MESFETs; Microwave devices; Phased arrays; Radar applications; Radio frequency; Semiconductor device doping; Semiconductor materials; Solid state circuits; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Radar Conference, 2005. EURAD 2005. European

Conference_Location

Paris

Print_ISBN

2-9600551-3-6

Type

conf

DOI

10.1109/EURAD.2005.1605549

Filename

1605549