Title :
Small-signal equivalent circuit of Fe:InP/InGaAs MESFET
Author_Institution :
Dept. of Electr. Eng., Nan-Tai Inst. of Technol., Yung Kang City, China
Abstract :
A method to determine the small-signal equivalent circuit of Fe:InP/InGaAs MESFETs is proposed. This method consists in a direct determination of both the extrinsic and intrinsic small-signal parameters
Keywords :
III-V semiconductors; S-parameters; Schottky gate field effect transistors; equivalent circuits; gallium arsenide; indium compounds; iron; microwave field effect transistors; semiconductor device models; InP:Fe-InGaAs; MESFET; extrinsic small-signal parameters; intrinsic small-signal parameters; small-signal equivalent circuit; Admittance; Cities and towns; Equations; Equivalent circuits; FETs; Indium gallium arsenide; MESFET circuits; Predictive models; Scattering parameters; Semiconductor process modeling;
Conference_Titel :
Microwave and Millimeter Wave Technology Proceedings, 1998. ICMMT '98. 1998 International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-4308-5
DOI :
10.1109/ICMMT.1998.768237
