Transimpedance amplifier design and performance for high bit rate optical fiber local loop networks

Author

Halkias, G. ; Papavassiliou, C. ; Perantinos, G. ; Stathaki, E. ; Turner, J. ; Christou, A.

Author_Institution

Found. for Res. & Technol.-Hellas, Crete, Greece

fYear

1997

fDate

4-7 Oct. 1997

Firstpage

41

Lastpage

44

Abstract

A transimpedance amplifier has been designed and fabricated using an established GaAs MMIC (monolithic microwave integrated circuit) technology based on ion-implanted GaAs MESFETs with 0.5- mu m gate length, interdigital and overlay SiN capacitors, via holes, and mesa resistors. The amplifier exhibits a transimpedance gain of 71 dB Omega over the -3-dB bandwidth of DC 2 GHz, a very low equivalent input noise current density of less than 2 pA/ square root Hz, and a DC power consumption of 0.62 W. After a series of design iterations the state-of-the-art amplifier was uniquely unconditionally stable with a large tolerance to external bias conditions.<>

Keywords

III-V semiconductors; MMIC; field effect integrated circuits; gallium arsenide; optical communication equipment; optical fibres; DC power consumption; GaAs; MESFETs; MMIC; bit rate; design iterations; equivalent input noise current density; external bias conditions; gate length; interdigital capacitors; mesa resistors; optical fiber local loop networks; overlay capacitors; tolerance; transimpedance amplifier; via holes; Bit rate; Gallium arsenide; Integrated circuit technology; Low-noise amplifiers; MESFET integrated circuits; MMICs; Microwave amplifiers; Microwave integrated circuits; Microwave technology; Monolithic integrated circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1992. Technical Digest 1992., 14th Annual IEEE

Conference_Location

Miami Beach, FL, USA

Print_ISBN

0-7803-0773-9

Type

conf

DOI

10.1109/GAAS.1992.247227

Filename

247227