• DocumentCode
    33889
  • Title

    Comparison of Y–Ba–Cu–O Films Irradiated With Helium and Neon Ions for the Fabricationof Josephson Devices

  • Author

    Cybart, Shane A. ; Yen, Patricia X. T. ; Cho, Ethan Y. ; Huh, Jeong Uk ; Glyantsev, V.N. ; Yung, Christopher S. ; Moeckly, Brian ; Beeman, Jeffrey W. ; Dynes, Robert C.

  • Author_Institution
    Dept. of Phys., Univ. of California at San Diego, La Jolla, CA, USA
  • Volume
    24
  • Issue
    4
  • fYear
    2014
  • fDate
    Aug. 2014
  • Firstpage
    1
  • Lastpage
    5
  • Abstract
    We have irradiated high-quality YBa2Cu3O7-δ thin films with 90-keV helium and 175-keV neon ions to compare how ions of different mass affect electrical transport and reduce superconducting transition temperature. We measure the temperature dependence of the resistivity for films irradiated with different fluence and compare the results with Monte Carlo ion implantation simulations. We observe a smaller increase in resistivity for films irradiated with neon than those irradiated with helium for an equivalent reduction in transition temperature. We attribute this observation to nonuniform damage throughout the thickness of the film when irradiated with neon, as opposed to a more uniform damage profile in the case of helium irradiation.
  • Keywords
    barium compounds; electrical resistivity; helium; ion beam effects; neon; superconducting junction devices; superconducting thin films; superconducting transition temperature; yttrium compounds; Josephson devices; YBCO; YBCO films; damage profile; electrical transport; helium ion irradiation; high-quality thin films; neon ion irradiation; resistivity; superconducting transition temperature; temperature dependence; Conductivity; Helium; Ions; Radiation effects; Superconducting transition temperature; Temperature measurement; Yttrium barium copper oxide; Ion implantation; high temperature superconductor;
  • fLanguage
    English
  • Journal_Title
    Applied Superconductivity, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1051-8223
  • Type

    jour

  • DOI
    10.1109/TASC.2014.2311400
  • Filename
    6766760