Temperature-dependent large signal model of heterojunction bipolar transistors

A large signal model of the heterojunction bipolar transistor has been developed which simulates forward active, saturation, and cutoff operation, with both transient and steady-state thermal effects included. This model is useful for simulating devise characteristics with different heatsinking configurations, allowing the use of on-wafer measurements to predict packaged device performance. All transport parameters have been extracted from bias-dependent S-parameter measurements, while parameters describing the thermal effects have been extracted from DC and pulsed I-V characterization. Excellent agreement have been found between the model and DC, pulsed, and RF measurements.<>