Title :
Flexible 2D electronics using nanoscale transparent polyimide gate dielectric
Author :
Saungeun Park ; Hsiao-Yu Chang ; Rahimi, Somayyeh ; Lee, Alvin ; Akinwande, Deji
Author_Institution :
Microelectron. Res. Center, Univ. of Texas at Austin, Austin, TX, USA
Abstract :
We report NPI as a flexible dielectric for transistors based on 2D atomic sheets such as graphene and MoS2, which features high mechanical flexibility, stable electrical performances and low roughness. NPI offers the realistic prospects for highly flexible electronics beyond the typical 2% limitation of high-κ or ceramic gate dielectrics.
Keywords :
MOSFET; flexible electronics; high-k dielectric thin films; 2D atomic sheets; ceramic gate dielectrics; electrical performances; flexible 2D electronics; flexible dielectric; high-κ dielectrics; mechanical flexibility; nanoscale transparent polyimide gate dielectric; Capacitance; Dielectric losses; Dielectric measurement; Propagation losses; Silicon; Strain;
Conference_Titel :
Device Research Conference (DRC), 2015 73rd Annual
Conference_Location :
Columbus, OH
Print_ISBN :
978-1-4673-8134-5
DOI :
10.1109/DRC.2015.7175628
