• DocumentCode
    3388928
  • Title

    Flexible 2D electronics using nanoscale transparent polyimide gate dielectric

  • Author

    Saungeun Park ; Hsiao-Yu Chang ; Rahimi, Somayyeh ; Lee, Alvin ; Akinwande, Deji

  • Author_Institution
    Microelectron. Res. Center, Univ. of Texas at Austin, Austin, TX, USA
  • fYear
    2015
  • fDate
    21-24 June 2015
  • Firstpage
    193
  • Lastpage
    194
  • Abstract
    We report NPI as a flexible dielectric for transistors based on 2D atomic sheets such as graphene and MoS2, which features high mechanical flexibility, stable electrical performances and low roughness. NPI offers the realistic prospects for highly flexible electronics beyond the typical 2% limitation of high-κ or ceramic gate dielectrics.
  • Keywords
    MOSFET; flexible electronics; high-k dielectric thin films; 2D atomic sheets; ceramic gate dielectrics; electrical performances; flexible 2D electronics; flexible dielectric; high-κ dielectrics; mechanical flexibility; nanoscale transparent polyimide gate dielectric; Capacitance; Dielectric losses; Dielectric measurement; Propagation losses; Silicon; Strain;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference (DRC), 2015 73rd Annual
  • Conference_Location
    Columbus, OH
  • Print_ISBN
    978-1-4673-8134-5
  • Type

    conf

  • DOI
    10.1109/DRC.2015.7175628
  • Filename
    7175628
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3388928