Numerical simulation of sidegating effect in GaAs MESFETs

Author

Shwu-Jing Chang ; Chien-Ping Lee

Author_Institution

Nat. Chiao Tung Univ., Hsinchu, Taiwan

fYear

1997

fDate

4-7 Oct. 1997

Firstpage

233

Lastpage

236

Abstract

Two-dimensional simulation of the sidegating effect in GaAs MESFETs have been performed with a realistic configuration, where both the FET and the sidegate are placed on the surface of the substrate. Shielding and enhancement of the sidegating effect by using Schottky metal bars, hysteresis associated with the threshold behavior of sidegating, temperature-dependence of the sidegating effect, and the reduction of the sidegating effect by isolation implants have also been studied. The results agree with experimental findings and confirm that Schottky contacts on the semi-insulating substrate and the presence of hole traps in the substrate are essential to the sidegating effect.<>

Keywords

III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; hole traps; hysteresis; simulation; 2D numerical simulation; GaAs; MESFETs; Schottky contacts; Schottky metal bars; hole traps; hysteresis; isolation implants; semi-insulating substrate; sidegating effect; temperature-dependence; threshold behavior; Bars; Electron traps; FETs; Gallium arsenide; Hysteresis; Implants; MESFETs; Numerical simulation; Schottky barriers; Temperature dependence;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1992. Technical Digest 1992., 14th Annual IEEE

Conference_Location

Miami Beach, FL, USA

Print_ISBN

0-7803-0773-9

Type

conf

DOI

10.1109/GAAS.1992.247264

Filename

247264