DocumentCode
3389006
Title
Elimination of sidegating in n-channel GaAs MESFETs using a p-type well
Author
Canfield, P.C. ; Allstot, D.J.
Author_Institution
Hewlett-Packard Co., Santa Rosa, CA, USA
fYear
1997
fDate
4-7 Oct. 1997
Firstpage
237
Lastpage
240
Abstract
The effect of p-type implants on the sidegating behavior of n-channel ion-implanted GaAs MESFETs is investigated. A number of different sidegate structures are examined, and the dependence of the sidegate threshold voltage on p-type dose is studied. For sidegate structures with a floating implanted p-type region, there are implants and doses which can either decrease or increase sidegating sensitivity. In addition, a contact to the p-type implant region has been provided to form an n-channel p-well MESFET. This device is shown to completely eliminate sidegating, even under strong illumination.<>
Keywords
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; ion implantation; GaAs; MESFETs; floating implanted p-type region; ion-implanted; n-channel; p-type dose; p-type well; sensitivity; sidegate threshold voltage; sidegating; Conductivity; Electrodes; Electrons; Gallium arsenide; Implants; Insulation; Lighting; MESFETs; Microwave technology; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1992. Technical Digest 1992., 14th Annual IEEE
Conference_Location
Miami Beach, FL, USA
Print_ISBN
0-7803-0773-9
Type
conf
DOI
10.1109/GAAS.1992.247265
Filename
247265
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