Title :
Simulation of trapping effects in GaAs MESFETs and requirements for substrates in MESFET-ICs
Author :
Horio, K. ; Fuseya, Y.
Author_Institution :
Shibaura Inst. of Technol., Omiya, Japan
Abstract :
Drain-current transient of GaAs MESFETs are simulated in the range of 10/sup -13/ to 10/sup 2/ s. The currents become constant temporarily at round t equivalent to 10/sup -11/ s, but begin to decrease or increase after some periods, reaching real steady-state values. The slow transients are attributed to trapping and detrapping by deep levels in the substrate. Effects of introducing a p-buffer layer on drain-current drifts, and small-signal parameters are also studied. It is shown that the use of a low acceptor-density semi-insulating substrate combined with introducing a p-buffer layer is effective for minimizing drain-current drifts and for utilizing high-speed and high-frequency performances of GaAs MESFETs.<>
Keywords :
III-V semiconductors; Schottky gate field effect transistors; electron traps; field effect integrated circuits; gallium arsenide; hole traps; semiconductor device models; simulation; substrates; 1*10/sup -13/ to 1*10/sup 2/ s; GaAs; MESFET-ICs; deep levels; detrapping; drain-current drifts; drain-current transients; low acceptor-density; p-buffer layer; semi-insulating substrate; slow transients; small-signal parameters; trapping effects; Charge carrier processes; Electron emission; Gallium arsenide; Impurities; MESFETs; Modeling; Poisson equations; Steady-state; Systems engineering and theory; Voltage;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1992. Technical Digest 1992., 14th Annual IEEE
Conference_Location :
Miami Beach, FL, USA
Print_ISBN :
0-7803-0773-9
DOI :
10.1109/GAAS.1992.247266
