Title :
InP integrated circuit technology for microwave, digital, and optoelectronic applications
Author :
Larson, L.E. ; Brown, J.J.
Author_Institution :
Hughes Res. Lab., Malibu, CA, USA
Abstract :
The authors summarize the status of InP-based electronic and optoelectronic device and circuit technology, with particular emphasis on the performance and manufacturability of the technology. It is pointed out that InP-based electronic and optoelectronic device and circuit technology is maturing rapidly, due to active worldwide research in a number of areas. Epitaxial growth technology is capable of realizing a variety of AlInGaAsP alloys that exhibit useful electronic and optoelectronic properties. InP-based MODFETs have realized extrinsic f/sub T/´s of over 300 GHz and 60 GHz noise figures of under 1.0 dB. InP-based heterojunction bipolar transistors have demonstrated excellent digital and linear IC performance, with clock rates exceeding 35 GHz. Optoelectronic ICs have been demonstrated with speeds of 10 Gb/s.<>
Keywords :
III-V semiconductors; MMIC; bipolar integrated circuits; digital integrated circuits; epitaxial growth; field effect integrated circuits; heterojunction bipolar transistors; high electron mobility transistors; indium compounds; integrated circuit technology; integrated optoelectronics; linear integrated circuits; semiconductor growth; 1 dB; 10 Gbit/s; 300 GHz; 35 GHz; 60 GHz; AlInGaAsP alloys; HBT; InP integrated circuit technology; MODFETs; OEIC; digital IC; epitaxial growth; heterojunction bipolar transistors; linear IC; microwave IC; optoelectronic device; Epitaxial growth; HEMTs; Heterojunction bipolar transistors; Indium phosphide; Integrated circuit technology; MODFET circuits; Manufacturing; Microwave devices; Noise figure; Optoelectronic devices;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1992. Technical Digest 1992., 14th Annual IEEE
Conference_Location :
Miami Beach, FL, USA
Print_ISBN :
0-7803-0773-9
DOI :
10.1109/GAAS.1992.247267
