Title :
A manufacturable high performance 0.1- mu m pseudomorphic AlGaAs/InGaAs HEMT process for W-band MMICs
Author :
Tan, K.L. ; Liu, P.H. ; Streit, D.C. ; Dia, R. ; Han, A.C. ; Freudenthal, A. ; Velebir, J. ; Stolt, K. ; Lee, J. ; Bidenbender, M. ; Lai, R. ; Wang, H. ; Allen, B.
Author_Institution :
TRW, Redondo Beach, CA, USA
Abstract :
A reproducible and high-performance 0.1- mu m pseudomorphic InGaAs HEMT (high-electron-mobility transistor) MMIC (monolithic microwave integrated circuit) process for W-band MMIC fabrication has been developed. The process has been transferred to production and will offer low-cost/high-volume production of W-band MMICs for both military and commercial applications. In developing this process, emphasis was placed on achieving high producibility without compromising the device performance necessary for successful implementation of W-band circuits. The authors present details of the process, device performance, examples from over 25 W-band MMICs fabricated to date, and the resulting process transfer to a flexible manufacturing line.<>
Keywords :
III-V semiconductors; MMIC; aluminium compounds; field effect integrated circuits; gallium arsenide; high electron mobility transistors; indium compounds; integrated circuit manufacture; 0.1 micron; AlGaAs-InGaAs; HEMT process; MMIC fabrication; W-band MMICs; flexible manufacturing line; high-electron-mobility transistor; high-volume production; low cost production; monolithic microwave integrated circuit; pseudomorphic device process; Fabrication; Flexible manufacturing systems; HEMTs; Indium gallium arsenide; MMICs; MODFETs; Manufacturing processes; Microwave integrated circuits; Monolithic integrated circuits; Production;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1992. Technical Digest 1992., 14th Annual IEEE
Conference_Location :
Miami Beach, FL, USA
Print_ISBN :
0-7803-0773-9
DOI :
10.1109/GAAS.1992.247268
