Title :
High efficiency X-band power HBTs
Author :
Wu, C.S. ; Pao, C.K. ; Hu, M. ; Igawa, A.T. ; Wang, D.C. ; Wen, C.P. ; Cisco, T.C.
Author_Institution :
Hughes Aircraft Co., Torrance, CA, USA
Abstract :
High-efficiency X-band power GaAs-AlGaAs HBT (heterojunction bipolar transistor) performance has been achieved. A common-base 6-emitter-finger HBT device (each finger periphery 2 mu m*20 mu m) exhibited a power-added-efficiency of 62.1%, an output power of 769 mW (power density of 6.4 W/mm), and a gain of 7.9 dB at 9 GHz. As compared to the published state-of-the-art results, this device showed better power efficiency and density at the same output power level. This high performance is attributed to process enhancement and a novel device topology.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; solid-state microwave devices; 62.1 percent; 769 mW; 9 GHz; GaAs-AlGaAs; SHF; X-band; common-base 6-emitter-finger; heterojunction bipolar transistor; power HBTs; Aircraft; Etching; Fingers; Gallium arsenide; Heterojunction bipolar transistors; Inductance; Phased arrays; Power generation; Substrates; Topology;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1992. Technical Digest 1992., 14th Annual IEEE
Conference_Location :
Miami Beach, FL, USA
Print_ISBN :
0-7803-0773-9
DOI :
10.1109/GAAS.1992.247270
