Producibility and performance of the microwave power HBT

Author

Ho, W.J. ; Wang, N.L. ; Chang, M.F. ; Higgins, J.A.

Author_Institution

Rockwell Int. Sci. Center, Thousand Oaks, CA, USA

fYear

1997

fDate

4-7 Oct. 1997

Firstpage

263

Lastpage

266

Abstract

The authors address the producibility and performance of self-aligned AlGaAs-GaAs heterojunction bipolar transistors (HBTs) for microwave power applications. Excellent device DC and RF characteristics and power performance have been demonstrated. The RF probing yield was consistently achieved from the DC screened HBTs. A f/sub max/ of 350 GHz was extrapolated for the common-base HBT. 7-12-GHz monolithic microwave integrated circuit (MMIC) amplifiers achieved a 4-W power level with 34% peak power added efficiency. A 7.5-14.0-GHz linear power amplifier demonstrated a low level of third-order intermodulation distortion. This excellent performance is achievable because of the characteristic uniformity of the material epitaxial growth and the simplicity of the self-aligned lithography process.<>

Keywords

III-V semiconductors; MMIC; aluminium compounds; bipolar integrated circuits; gallium arsenide; heterojunction bipolar transistors; intermodulation; microwave amplifiers; power amplifiers; power transistors; semiconductor growth; solid-state microwave devices; vapour phase epitaxial growth; 34 percent; 350 GHz; 4 W; 7 to 14 GHz; AlGaAs-GaAs; DC characteristics; MMIC; RF characteristics; SHF; common-base HBT; epitaxial growth; heterojunction bipolar transistors; intermodulation distortion; linear power amplifier; microwave power HBT; monolithic microwave integrated circuit; producibility; self-aligned lithography process; third order IMD; Heterojunction bipolar transistors; Integrated circuit yield; MMICs; Microwave amplifiers; Microwave devices; Microwave integrated circuits; Monolithic integrated circuits; Power amplifiers; Radio frequency; Radiofrequency amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1992. Technical Digest 1992., 14th Annual IEEE

Conference_Location

Miami Beach, FL, USA

Print_ISBN

0-7803-0773-9

Type

conf

DOI

10.1109/GAAS.1992.247271

Filename

247271