Title :
A novel translinear principle based BiMOS transconductor
Author :
Kiran, S. Pradeep ; Rao, K. Radhakrishna
Author_Institution :
Texas Instrum. India Ltd., Bangalore, India
Abstract :
A transconductor that exploits the square law relation of the FET in conjunction with the translinear relation for the bipolar transistors is proposed. Linear output is achieved by taking the square root of the drain current. Simulation results of the transconductor are given
Keywords :
BIMOS integrated circuits; analogue processing circuits; nonlinear network analysis; BiMOS transconductor; analogue processing circuits; bipolar transistors; drain current; square law relation; square root; translinear principle; translinear relation; Circuit simulation; Circuit synthesis; Cutoff frequency; FETs; Gallium arsenide; MOSFETs; Power supplies; Transconductors; Variable structure systems; Voltage;
Conference_Titel :
VLSI Design, 1998. Proceedings., 1998 Eleventh International Conference on
Conference_Location :
Chennai
Print_ISBN :
0-8186-8224-8
DOI :
10.1109/ICVD.1998.646596
