Title :
A complete 400 Mb/s burst-mode data OEIC receiver
Author :
Mactaggart, R. ; Bendett, M. ; Taylor, S.
Author_Institution :
Honeywell Systems Res. Center, Bloomington, MN, USA
Abstract :
A fully monolithic optical receiver chip designed using GaAs MESFETs is described. The chip is designed to process burst data and will not generate spurious data in the event of link failure which is detected by a link status flag. This GaAs MESFET optoelectronic integrated circuit (OEIC) receiver uses a new timing recovery circuit which permits broadband burst mode operation with high tolerance to data jitter. This is integrated along with a photodetector, analog transimpedance and limiter amplifiers, and a 1:10 demultiplexer, and a 4B5B decoder with address header detection on a single 209*115 mil die.<>
Keywords :
Schottky gate field effect transistors; data communication equipment; decoding; digital communication systems; field effect integrated circuits; integrated optoelectronics; optical receivers; photodetectors; 400 Mbit/s; 4B5B decoder; GaAs; OEIC receiver; address header detection; analogue transimpedance amplifier; broadband burst mode operation; burst-mode data; demultiplexer; limiter amplifiers; link status flag; monolithic optical receiver chip; optoelectronic integrated circuit; photodetector; timing recovery circuit; Event detection; Gallium arsenide; MESFET circuits; MESFET integrated circuits; Optical design; Optical receivers; Optoelectronic devices; Photodetectors; Process design; Timing jitter;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1992. Technical Digest 1992., 14th Annual IEEE
Conference_Location :
Miami Beach, FL, USA
Print_ISBN :
0-7803-0773-9
DOI :
10.1109/GAAS.1992.247274
