A complete 400 Mb/s burst-mode data OEIC receiver

Author

Mactaggart, R. ; Bendett, M. ; Taylor, S.

Author_Institution

Honeywell Systems Res. Center, Bloomington, MN, USA

fYear

1997

fDate

4-7 Oct. 1997

Firstpage

283

Lastpage

286

Abstract

A fully monolithic optical receiver chip designed using GaAs MESFETs is described. The chip is designed to process burst data and will not generate spurious data in the event of link failure which is detected by a link status flag. This GaAs MESFET optoelectronic integrated circuit (OEIC) receiver uses a new timing recovery circuit which permits broadband burst mode operation with high tolerance to data jitter. This is integrated along with a photodetector, analog transimpedance and limiter amplifiers, and a 1:10 demultiplexer, and a 4B5B decoder with address header detection on a single 209*115 mil die.<>

Keywords

Schottky gate field effect transistors; data communication equipment; decoding; digital communication systems; field effect integrated circuits; integrated optoelectronics; optical receivers; photodetectors; 400 Mbit/s; 4B5B decoder; GaAs; OEIC receiver; address header detection; analogue transimpedance amplifier; broadband burst mode operation; burst-mode data; demultiplexer; limiter amplifiers; link status flag; monolithic optical receiver chip; optoelectronic integrated circuit; photodetector; timing recovery circuit; Event detection; Gallium arsenide; MESFET circuits; MESFET integrated circuits; Optical design; Optical receivers; Optoelectronic devices; Photodetectors; Process design; Timing jitter;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1992. Technical Digest 1992., 14th Annual IEEE

Conference_Location

Miami Beach, FL, USA

Print_ISBN

0-7803-0773-9

Type

conf

DOI

10.1109/GAAS.1992.247274

Filename

247274