Numerical simulation of electro-migration failure of copper-filled via holes in ULSI interconnects

Author

Zhiguo, Li ; Zhongrong, Zhou ; Zhengjun, Lu ; Wei, Zhang

Author_Institution

Coll. of Electron. Inf. & Control Eng., Beijing Polytech. Univ., China

fYear

2003

fDate

11-13 March 2003

Firstpage

210

Lastpage

214

Abstract

By using three-dimension finite element modeling simulation of the current density, the temperature and its gradient distribution in a copper-filled via hole structure was carried out. Then we compared the distributions in the via holes with different barrier materials. Also, via holes with the same barrier material but different obliquity were simulated. The result shows that through optimization of the via hole obliquity, and selection of the barrier material, the reliability of ULSI can be improved.

Keywords

ULSI; circuit optimisation; copper; current density; electromigration; failure analysis; finite element analysis; integrated circuit interconnections; integrated circuit metallisation; integrated circuit modelling; integrated circuit reliability; temperature distribution; 3D finite element modeling; Cu; FEM; ULSI interconnects; ULSI reliability; barrier material selection; copper-filled via holes; current density; electromigration failure; oblique via holes; temperature gradient distribution; via hole obliquity optimization; Aluminum; Copper; Current density; Delay; Finite element methods; Integrated circuit interconnections; Numerical simulation; Temperature distribution; Thermal stresses; Ultra large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Thermal Measurement and Management Symposium, 2003. Ninteenth Annual IEEE

ISSN

1065-2221

Print_ISBN

0-7803-7793-1

Type

conf

DOI

10.1109/STHERM.2003.1194364

Filename

1194364