Title :
Numerical simulation of electro-migration failure of copper-filled via holes in ULSI interconnects
Author :
Zhiguo, Li ; Zhongrong, Zhou ; Zhengjun, Lu ; Wei, Zhang
Author_Institution :
Coll. of Electron. Inf. & Control Eng., Beijing Polytech. Univ., China
Abstract :
By using three-dimension finite element modeling simulation of the current density, the temperature and its gradient distribution in a copper-filled via hole structure was carried out. Then we compared the distributions in the via holes with different barrier materials. Also, via holes with the same barrier material but different obliquity were simulated. The result shows that through optimization of the via hole obliquity, and selection of the barrier material, the reliability of ULSI can be improved.
Keywords :
ULSI; circuit optimisation; copper; current density; electromigration; failure analysis; finite element analysis; integrated circuit interconnections; integrated circuit metallisation; integrated circuit modelling; integrated circuit reliability; temperature distribution; 3D finite element modeling; Cu; FEM; ULSI interconnects; ULSI reliability; barrier material selection; copper-filled via holes; current density; electromigration failure; oblique via holes; temperature gradient distribution; via hole obliquity optimization; Aluminum; Copper; Current density; Delay; Finite element methods; Integrated circuit interconnections; Numerical simulation; Temperature distribution; Thermal stresses; Ultra large scale integration;
Conference_Titel :
Semiconductor Thermal Measurement and Management Symposium, 2003. Ninteenth Annual IEEE
Print_ISBN :
0-7803-7793-1
DOI :
10.1109/STHERM.2003.1194364
