Title :
10-20 Gbit/s GaAs/AlGaAs HEMT ICs for high speed data links
Author :
Berroth, M. ; Hurm, V. ; Lang, M. ; Ludwig, M. ; Nowotny, U. ; Wang, Z.-G. ; Wennekers, P. ; Hulsmann, A. ; Kaufel, G. ; Kohler, K. ; Raynor, B. ; Schneider, J.
Author_Institution :
Fraunhofer-Inst. fur Angewandte Festkorperphysik, Freiburg, Germany
Abstract :
A set of ICs has been developed for high-speed data links at data rates above 10 Gb/s. A recessed gate process for double pulse doped quantum well transistors has been used with e-beam written 0.3- mu m gates. A 4-b multiplexer and a laser diode driver for the transmitter as well as a transimpedance amplifier, bit synchronizer, and 4-b demultiplexer for the receiver have been successfully operated with data rates up to 20 Gb/s.<>
Keywords :
III-V semiconductors; aluminium compounds; data communication equipment; demultiplexing equipment; digital communication systems; field effect integrated circuits; gallium arsenide; high electron mobility transistors; multiplexing equipment; optical communication equipment; optical receivers; synchronisation; transmitters; 0.3 micron; 10 to 20 Gbit/s; GaAs-AlGaAs; HEMT ICs; bit synchronizer; demultiplexer; double pulse doped; high speed data links; laser diode driver; multiplexer; quantum well transistors; receiver; recessed gate process; transimpedance amplifier; transmitter; Diode lasers; Driver circuits; FETs; Gallium arsenide; HEMTs; Logic circuits; Multiplexing; Optical amplifiers; Optical receivers; Optical transmitters;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1992. Technical Digest 1992., 14th Annual IEEE
Conference_Location :
Miami Beach, FL, USA
Print_ISBN :
0-7803-0773-9
DOI :
10.1109/GAAS.1992.247276
