10-20 Gbit/s GaAs/AlGaAs HEMT ICs for high speed data links

Author

Berroth, M. ; Hurm, V. ; Lang, M. ; Ludwig, M. ; Nowotny, U. ; Wang, Z.-G. ; Wennekers, P. ; Hulsmann, A. ; Kaufel, G. ; Kohler, K. ; Raynor, B. ; Schneider, J.

Author_Institution

Fraunhofer-Inst. fur Angewandte Festkorperphysik, Freiburg, Germany

fYear

1997

fDate

4-7 Oct. 1997

Firstpage

291

Lastpage

294

Abstract

A set of ICs has been developed for high-speed data links at data rates above 10 Gb/s. A recessed gate process for double pulse doped quantum well transistors has been used with e-beam written 0.3- mu m gates. A 4-b multiplexer and a laser diode driver for the transmitter as well as a transimpedance amplifier, bit synchronizer, and 4-b demultiplexer for the receiver have been successfully operated with data rates up to 20 Gb/s.<>

Keywords

III-V semiconductors; aluminium compounds; data communication equipment; demultiplexing equipment; digital communication systems; field effect integrated circuits; gallium arsenide; high electron mobility transistors; multiplexing equipment; optical communication equipment; optical receivers; synchronisation; transmitters; 0.3 micron; 10 to 20 Gbit/s; GaAs-AlGaAs; HEMT ICs; bit synchronizer; demultiplexer; double pulse doped; high speed data links; laser diode driver; multiplexer; quantum well transistors; receiver; recessed gate process; transimpedance amplifier; transmitter; Diode lasers; Driver circuits; FETs; Gallium arsenide; HEMTs; Logic circuits; Multiplexing; Optical amplifiers; Optical receivers; Optical transmitters;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1992. Technical Digest 1992., 14th Annual IEEE

Conference_Location

Miami Beach, FL, USA

Print_ISBN

0-7803-0773-9

Type

conf

DOI

10.1109/GAAS.1992.247276

Filename

247276