Title :
A 9.6 Gb/s HEMT ATM switch LSI for B-ISDN
Author :
Watanabe, Y. ; Nakasha, Y. ; Kato, Y. ; Odani, K. ; Abe, M.
Author_Institution :
Fujitsu Lab. Ltd., Atsugi, Japan
Abstract :
An asynchronous transfer mode (ATM) switch LSI has been designed for the broadband integrated services digital network (B-ISDN) and fabricated using 0.6- mu m high-electron-mobility transistor (HEMT) technology. To enhance the high-speed performance of direct coupled FET logic (DCFL), event control logic was used for the first-in first-out (FIFO) buffer circuit, instead of conventional static memory. The 4.8-mm*4.7-mm chip contains 7100 DCFL gates. The maximum operation frequency was 1.2 GHz at room temperature with a power dissipation of 3.7 W. The single-chip throughput was 9.6 Gb/s.<>
Keywords :
B-ISDN; asynchronous transfer mode; digital communication systems; digital integrated circuits; direct coupled FET logic; electronic switching systems; field effect integrated circuits; high electron mobility transistors; large scale integration; semiconductor switches; 0.6 micron; 1.2 GHz; 3.7 W; 9.6 Gbit/s; ATM switch LSI; B-ISDN; DCFL gates; FIFO buffer circuit; HEMT; asynchronous transfer mode; broadband integrated services digital network; direct coupled FET logic; event control logic; first-in first-out; high-electron-mobility transistor; high-speed performance; Asynchronous transfer mode; B-ISDN; Coupling circuits; FETs; HEMTs; Integrated circuit technology; Large scale integration; Logic circuits; MODFETs; Switches;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1992. Technical Digest 1992., 14th Annual IEEE
Conference_Location :
Miami Beach, FL, USA
Print_ISBN :
0-7803-0773-9
DOI :
10.1109/GAAS.1992.247277
