4 W, 7-12 GHz, compact CB HBT MMIC power amplifier

Author

Wang, N.-L. ; Ho, W.-J. ; Higgins, J.A.

Author_Institution

Rockwell Int. Sci. Center, Thousand Oaks, CA, USA

fYear

1997

fDate

4-7 Oct. 1997

Firstpage

301

Lastpage

304

Abstract

Extremely compact, broadband, heterojunction bipolar transistor (HBT) power amplifiers (PAs) were demonstrated with excellent performance. Common base (CB) HBTs were used in three single-stage broadband power amplifier designs, 1 W, 2 W, and 4 W, covering 7 to 11 GHz. In addition, a 1-W common emitter (CE) HBT linear amplifier was studied for its intermodulation property for communication application. The CB HBT PAs show good scaling relation in output power level. The peak power added efficiency is 40% for both the 1-W and 2-W versions, and 34% for the 4-W version. The chip size is only 2.15 mm by 2.9 mm for the 4-W CB HBT power amplifier. The CE HBT PA provides 1-W saturated output power in class B operation. In class A linear operation, 0.4-W output power was achieved. A two-tone test showed that IM/sub 3/ is better than -20 dBc at 1-dB compression point.<>

Keywords

MMIC; bipolar integrated circuits; heterojunction bipolar transistors; intermodulation; microwave amplifiers; power amplifiers; wideband amplifiers; 0.4 to 4 W; 34 percent; 40 percent; 7 to 12 GHz; HBT MMIC; SHF; broadband; class A linear operation; class B operation; common base; common emitter; compact design; heterojunction bipolar transistor; intermodulation property; linear amplifier; power amplifier; Broadband amplifiers; Circuits; Filters; Heterojunction bipolar transistors; High power amplifiers; Impedance matching; MMICs; Microwave amplifiers; Power amplifiers; Power generation;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1992. Technical Digest 1992., 14th Annual IEEE

Conference_Location

Miami Beach, FL, USA

Print_ISBN

0-7803-0773-9

Type

conf

DOI

10.1109/GAAS.1992.247278

Filename

247278