Title :
A monolithic 35 GHz HBT quasi-optical grid oscillator
Author :
Sovero, E.A. ; Kim, M. ; Weikle, R.M., II ; Deakin, D.S. ; Ho, W.J. ; Higgins, J.A. ; Rutledge, D.B.
Author_Institution :
Rockwell Int. Sci. Center, Thousand Oaks, CA, USA
Abstract :
The authors report on the fabrication and testing of a monolithic 35-GHz grid oscillator. The frequency of operation was 34.6-GHz at 13 dBm estimated ERP (equivalent radiated power). The device consists of an array of 6 by 6 HBT (heterojunction bipolar transistor) unit cells. The chip dimensions were 6 mm by 7 mm. Oscillators of this kind utilize the free-space propagation characteristics of electromagnetic beams to synchronize the operation of many spatially separated devices. Grid devices use optical techniques to provide electrical functions such as feedback and power combining. The frequency of operation is determined by the dimension of the unit cell and by the distance from the reflecting (feedback) back mirror. Higher frequencies require smaller unit cells, thus opening the possibility of very compact high-power millimeter-wave sources.<>
Keywords :
MMIC; bipolar integrated circuits; feedback; heterojunction bipolar transistors; microwave oscillators; synchronisation; 34.6 to 35 GHz; EHF; HBT; back mirror; electromagnetic beams; fabrication; feedback; free-space propagation characteristics; heterojunction bipolar transistor; high power MM-wave sources; millimeter-wave sources; power combining; quasi-optical grid oscillator; spatially separated devices; testing; Electromagnetic propagation; Enterprise resource planning; Fabrication; Frequency estimation; Heterojunction bipolar transistors; Optical devices; Optical feedback; Optical propagation; Oscillators; Testing;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1992. Technical Digest 1992., 14th Annual IEEE
Conference_Location :
Miami Beach, FL, USA
Print_ISBN :
0-7803-0773-9
DOI :
10.1109/GAAS.1992.247279