HBT low power consumption 2-4.5 GHz variable gain feedback amplifier

Author

Kobayashi, K.W. ; Esfandiari, R. ; Umemoto, D.K. ; Oki, A.K. ; Tran, L.T. ; Streit, D.C.

Author_Institution

TRW, Redondo Beach, CA, USA

fYear

1997

fDate

4-7 Oct. 1997

Firstpage

309

Lastpage

312

Abstract

The authors report the results on a 2-4.5-GHz GaAs HBT (heterojunction bipolar transistor) low-noise and ultralow-power feedback amplifier. The amplifier has a minimum noise of 3.9 dB and 10.5-dB gain with less than 40 mW of power consumption. The amplifier is self-biased through a 5-V supply. At optimum noise bias, the minimum noise figure is 3.7 dB with 15-dB associated gain. The amplifier gain ranges from 10.5 to 24 dB by changing the voltage supply from 5 to 12 V. The corresponding noise variation is 1 dB. At a maximum gain of 24 dB the corresponding noise figure and IP3 are 4.65 dB and 21 dBm.<>

Keywords

III-V semiconductors; MMIC; bipolar integrated circuits; feedback; gallium arsenide; heterojunction bipolar transistors; microwave amplifiers; 10.5 to 24 dB; 2 to 4.5 GHz; 3.7 to 4.65 dB; 40 mW; 5 to 12 V; GaAs; HBT; LNA; MMIC; SHF; UHF; feedback amplifier; heterojunction bipolar transistor; low power consumption; low-noise; self-biased; ultralow-power; variable gain; Energy consumption; Feedback amplifiers; Frequency; Gain; Gallium arsenide; Heterojunction bipolar transistors; Noise figure; Space technology; Transconductance; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1992. Technical Digest 1992., 14th Annual IEEE

Conference_Location

Miami Beach, FL, USA

Print_ISBN

0-7803-0773-9

Type

conf

DOI

10.1109/GAAS.1992.247280

Filename

247280