Title :
Integrated complementary HBT microwave push-pull and Darlington amplifiers with PNP active loads
Author :
Kobayashi, K.W. ; Umemoto, D.K. ; Velebir, J.R. ; Streit, D.C. ; Oki, A.K.
Author_Institution :
TRW, Redondo Beach, CA, USA
Abstract :
The authors report the first microwave results on complementary heterojunction bipolar transistor (HBT) amplifiers which integrate both NPN and PNP devices on the same chip using selective molecular beam epitaxy. An HBT wideband amplifier utilizing the Darlington configuration and implementing a PNP active load has a gain of 7.5 dB and a bandwidth from DC to 2.5 GHz. A complementary push-pull amplifier has a saturated output power of 7.5 dBm at 2.5 GHz.<>
Keywords :
MMIC; bipolar integrated circuits; heterojunction bipolar transistors; wideband amplifiers; 0 to 2.5 GHz; 2.5 GHz; 7.5 dB; Darlington amplifiers; MBE; PNP active loads; UHF; complementary HBT; heterojunction bipolar transistor; push-pull; selective molecular beam epitaxy; wideband amplifier; Broadband amplifiers; Circuits; Doping profiles; Gallium arsenide; Heterojunction bipolar transistors; Microwave amplifiers; Microwave technology; Molecular beam epitaxial growth; Optical amplifiers; Power amplifiers;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1992. Technical Digest 1992., 14th Annual IEEE
Conference_Location :
Miami Beach, FL, USA
Print_ISBN :
0-7803-0773-9
DOI :
10.1109/GAAS.1992.247281
