• DocumentCode
    3389382
  • Title

    Diagnostics of laser evaporated Al in NH3 atmosphere [AlN deposition]

  • Author

    Mele, A. ; Guidoni, A. Giardini ; Palma, T. M Di ; Teghil, R. ; Orlando, S.

  • Author_Institution
    Dipartimento di Chimica, Rome Univ., Italy
  • fYear
    1996
  • fDate
    5-9 Aug. 1996
  • Firstpage
    65
  • Lastpage
    66
  • Abstract
    The authors report results of the preparation of AlN films obtained by diagnostics of the reaction of laser evaporated Al with NH/sub 3/. The films fabricated by this method have been characterized by Auger, EDX, scanning electron microscopy (SEM), and X-ray diffraction spectra.
  • Keywords
    Auger effect; III-V semiconductors; X-ray chemical analysis; X-ray diffraction; aluminium compounds; pulsed laser deposition; scanning electron microscopy; semiconductor growth; semiconductor thin films; Al; AlN; AlN films; Auger spectra; EDX; NH/sub 3/; NH/sub 3/ atmosphere; SEM; X-ray diffraction; diagnostics; laser evaporated Al; preparation; scanning electron microscopy; Aluminum; Gas lasers; Laser ablation; Optical device fabrication; Optical imaging; Optical refraction; Pulsed laser deposition; Scanning electron microscopy; Semiconductor materials; Spectroscopy;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Advanced Applications of Lasers in Materials Processing/Broadband Optical Networks/Smart Pixels/Optical MEMs and Their Applications. IEEE/LEOS 1996 Summer Topical Meetings:
  • Conference_Location
    Keystone, CO, USA
  • Print_ISBN
    0-7803-3175-3
  • Type

    conf

  • DOI
    10.1109/LEOSST.1996.540680
  • Filename
    540680
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3389382