• DocumentCode
    3389597
  • Title

    InP FinFETs with damage-free and record high-aspect-ratio (45∶1) fins fabricated by metal-assisted chemical etching

  • Author

    Yi Song ; Mohseni, Parsian K. ; Seung Hyun Kim ; Jae Cheol Shin ; Chen Zhang ; Chabak, Kelson ; Xiuling Li

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of Illinois at Urbana-Champaign, Urbana, IL, USA
  • fYear
    2015
  • fDate
    21-24 June 2015
  • Firstpage
    253
  • Lastpage
    254
  • Abstract
    Damage-free metal-assisted chemical etching (MacEtch) was used to fabricate InP junctionless FinFETs with ultra-high aspect ratio (~ 45:1) fins. For devices with Lg = 560 nm, 20 - 32 nm fin width, and 600 nm active fin height, Ion/Ioff ~ 106, and near-ideal subthreshold swing (70 mV/dec) were achieved.
  • Keywords
    III-V semiconductors; MOSFET; etching; indium compounds; InP; InP junctionless FinFET; damage-free MacEtch; damage-free metal-assisted chemical etching; size 20 nm to 32 nm; size 560 nm; size 600 nm; ultra-high aspect ratio fins; Arrays; Etching; Gold; Hafnium; III-V semiconductor materials; Indium phosphide; Logic gates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference (DRC), 2015 73rd Annual
  • Conference_Location
    Columbus, OH
  • Print_ISBN
    978-1-4673-8134-5
  • Type

    conf

  • DOI
    10.1109/DRC.2015.7175665
  • Filename
    7175665
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3389597