Realization and application of nanometer E-beam lithography system

The electron beam lithography system is a kind of important nanofabrication equipment with high resolution and excellent flexibility. In this paper, nanometer electron beam lithography (EBL) system based on scanning electron microscope is introduced. Its main components include a modified SEM, a laser interferometer controlled stage, a versatile high speed pattern generator, and a fully functional and easy-operational software system. In order to explain this EBL system design principle, realization method, this paper mainly introduces each component´s design basis, main structures and functions. Stitching experiments and overlay experiments have been done on this EBL system based on JSM-35CF SEM. The lithography results show that stitching and overlay error is less than 100 nm. This kind of EBL system based on SEM can meet the need of micro-nanofabrication research and design activities at flexibility and low price.