Title :
A power MOSFET model based on a lumped-charge approach
Author :
Budihardjo, Irwan ; Kongsang, Boonturn ; Lauritzen, P.O.
Author_Institution :
Dept. of Electr. Eng., Washington Univ., Seattle, WA, USA
Abstract :
The lumped-charge approach offers a compact, physical power MOSFET model which is equivalent in complexity to the SPICE MOSFET model (level 1) used for low voltage devices. The surface charge is assumed to be lumped into nodes calculated using standard delta depletion (body region) or moderate depletion (drain region) approximations. An equivalent circuit for the MOSFET model can be derived from the interaction of the internal lumped-charges with the three external terminal voltages. The model is implemented in the SABER simulator. Simulated results are in good agreement with measured results.
Keywords :
circuit analysis computing; digital simulation; equivalent circuits; insulated gate field effect transistors; power transistors; semiconductor device models; SABER simulator; body region; drain region; equivalent circuit; external terminal voltages; internal lumped-charges; lumped-charge approach; moderate depletion; power MOSFET model; standard delta depletion; Body regions; Capacitance; Circuit simulation; Electrodes; Equivalent circuits; Low voltage; MOSFET circuits; Mathematical model; Power MOSFET; SPICE;
Conference_Titel :
Computers in Power Electronics, 1992., IEEE Workshop on
Conference_Location :
Berkeley, CA, USA
Print_ISBN :
0-7803-0920-0
DOI :
10.1109/CIPE.1992.247305
