SiGe BiCMOS wide-band and tunable bandpass LNAs for adaptive multi-functional phased arrays

Author

Malmqvist, R. ; Samuelsson, C. ; Nilsson, T. ; Ferrer, I. ; Svedin, J. ; Dalera, A.

Author_Institution

FOI Swedish Defence Res. Agency, Linkoping

fYear

2005

fDate

6-7 Oct. 2005

Firstpage

231

Lastpage

234

Abstract

We study possibilities of implementing two key components for the RF front-ends of adaptive multi-functional phased arrays using a SiGe BiCMOS low cost technology. Measured data of an L-band to X-band LNA together with simulated results of a 5.2-5.5 GHz tunable bandpass LNA (active filter) show that adequate performance (in terms of high gain, low noise figure and power dissipation) potentially can be achieved while using small circuit areas. We further propose the use of low loss RF MEMS based TTDs as frequency tuning elements in tunable bandpass LNAs to be able to achieve wider center frequency tuning ranges (up to 20-50%) and also lower values of noise figure and power dissipation, respectively

Keywords

BiCMOS integrated circuits; Ge-Si alloys; MMIC amplifiers; active filters; adaptive antenna arrays; band-pass filters; micromechanical devices; semiconductor materials; wideband amplifiers; 5.2 to 5.5 GHz; BiCMOS wide-band LNA; L-band LNA; RF MEMS; RF front-ends; SiGe; X-band LNA; active filter; adaptive multifunctional phased arrays; noise figure; power dissipation; tunable bandpass LNA; Adaptive arrays; BiCMOS integrated circuits; Frequency; Germanium silicon alloys; Noise figure; Phased arrays; Power dissipation; Silicon germanium; Tunable circuits and devices; Wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Radar Conference, 2005. EURAD 2005. European

Conference_Location

Paris

Print_ISBN

2-9600551-3-6

Type

conf

DOI

10.1109/EURAD.2005.1605607

Filename

1605607