DocumentCode
3389868
Title
Influence of defect capture rate on defect-yield-correlations and generally defect control strategies
Author
Tochtrop, Thomas
Author_Institution
Philips Semicond. GmbH, Boblingen, Germany
fYear
2003
fDate
31 March-1 April 2003
Firstpage
17
Lastpage
28
Abstract
The influence of defect capture rate on defect line control and defect-yield-correlations is discussed. Practical examples reveal, that even for "biggest killing defects" capture rates are far below 100%. An overview about associated defect line control problems is given. A simple model, taking recipe parameters such like gain and threshold into account is discussed to describe one origin. Three examples are given which prove the strong influence of capture rate variations on practical aspects of defectivity. This realization enforces to revise defect line control strategies and defect-yield-correlation models.
Keywords
correlation methods; integrated circuit yield; process monitoring; production control; binmap correlation; capture rate variations; defect capture rate; defect line control strategies; defect-yield-correlation models; defect-yield-correlations; defectivity; gain; kill ratio; recipe parameters; semiconductor manufacturing; threshold; Condition monitoring; Inspection; Laser modes; Laser theory; Measurement techniques; Particle measurements; Performance evaluation; Semiconductor device measurement; Semiconductor device modeling; Stacking;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Manufacturing Conference and Workshop, 2003 IEEEI/SEMI
ISSN
1078-8743
Print_ISBN
0-7803-7681-1
Type
conf
DOI
10.1109/ASMC.2003.1194461
Filename
1194461
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