Title :
Failure analysis case studies using the IR-OBIRCH (infrared optical beam induced resistance change) method
Author :
Nikawa, Kiyoshi ; Inoue, Shoji ; Morimoto, Kazuyuki ; Sone, Shinya
Author_Institution :
Device Anal. Technol. Lab., NEC Corp., Japan
Abstract :
The IR-OBIRCH (infrared optical beam induced resistance change) method was proposed and developed by Nikawa and Tozaki in 1993 and this method has been shown to be applicable for detecting defects and current paths by using test structures and/or artificial failures. Here we present the results of the actual failure analysis from real failures of DRAMs, ASICs, power MOSFETs and microcomputers, which failed during mass production, development, user tests, and ESD simulation. In the analysis of a microcomputers we applied test vectors from an ATE docked to the IR-OBIRCH system, in order to reproduce the failure state during IR-OBIRCH imaging. The results showed that the IR-OBIRCH is suitable not only for improving reliability but also for increasing yield
Keywords :
DRAM chips; OBIC; application specific integrated circuits; automatic test equipment; electrostatic discharge; failure analysis; integrated circuit reliability; integrated circuit testing; integrated circuit yield; power MOSFET; semiconductor device testing; ASICs; ATE; DRAMs; ESD simulation; IR-OBIRCH; current paths; failure analysis; failure state; infrared optical beam induced resistance change; power MOSFETs; reliability; test structures; yield; Analytical models; Electrostatic discharge; Failure analysis; Image analysis; Infrared detectors; MOSFETs; Mass production; Microcomputers; Optical beams; Testing;
Conference_Titel :
Test Symposium, 1999. (ATS '99) Proceedings. Eighth Asian
Conference_Location :
Shanghai
Print_ISBN :
0-7695-0315-2
DOI :
10.1109/ATS.1999.810781
