QML qualified 256 K radiation-hardened CMOS SRAM

Author

Brown, R. ; Damato, J. ; Haddad, N. ; Posey, B. ; Scott, T. ; Murrill, S. ; Groseth, J. ; McGregor, S.

Author_Institution

IBM Federal Syst. Co., Manassas, VA, USA

fYear

1992

fDate

1992

Firstpage

72

Lastpage

81

Abstract

The IBM 256 K SRAM is a high-performance, low-power device designed and fabricated in 0.8- mu m Enhanced Radiation-Hardened CMOS technology (RHCMOS-E). It is organized in a 32 K*8 or 256 K*1 configuration and is available with either CMOS or TTL input receivers. The device was developed to satisfy future space application requirements. Radiation testing indicates that the device meets or exceeds all program requirements, while continuing to meet performance requirements. The 256 K RH SRAM has received QML qualifications is in full production, and has been delivered for use in space applications.

Keywords

CMOS integrated circuits; SRAM chips; aerospace instrumentation; aerospace simulation; integrated circuit testing; military equipment; radiation hardening (electronics); 0.8 micron; 256 kbit; QML qualifications; RHCMOS-E technology; TTL input receivers; high-performance; low-power device; military application; performance requirements; radiation-hardened CMOS SRAM; space application; CMOS technology; Circuit simulation; Laboratories; Production; Radiation hardening; Random access memory; Single event upset; Space technology; Temperature sensors; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation Effects Data Workshop, 1992. Workshop Record., 1992 IEEE

Conference_Location

New Orleans, LA, USA

Print_ISBN

0-7803-0930-8

Type

conf

DOI

10.1109/REDW.1992.247321

Filename

247321