Title :
Ionizing radiation effects on commercial 256 K EEPROM´s
Author :
Bumbaugh, Mark E. ; Rosario, Dalton S.
Author_Institution :
US Army Lab. Command, Harry Diamond Labs., Adelphi, MD, USA
Abstract :
The effects of both steady-state and pulsed ionizing radiation on five types of electronically erasable programmable read-only memories (EEPROM´s) was determined. Write- and read-failure levels and the changes in access time and standby current were determined for total dose. Data upset, latchup and burnout tests were made in the dose-rate environment.
Keywords :
EPROM; gamma-ray effects; integrated circuit testing; military equipment; radiation hardening (electronics); 256 kbit; access time; burnout tests; commercial EEPROM; data upset; dose-rate environment; latchup; pulsed ionizing radiation; read-failure levels; standby current; steady-state ionizing radiation effects; tactical nuclear environment simulation; write-failure levels; Circuit testing; EPROM; Integrated circuit testing; Ionizing radiation; Laboratories; MOS devices; Nonvolatile memory; Temperature; Tunneling; Voltage;
Conference_Titel :
Radiation Effects Data Workshop, 1992. Workshop Record., 1992 IEEE
Conference_Location :
New Orleans, LA, USA
Print_ISBN :
0-7803-0930-8
DOI :
10.1109/REDW.1992.247326
