Promising N-Type FinFET devices without or with cobalt-silicide applied to the gate

Channels of FinFET are 3 dimensional fin-like structures which are thin enough to be fully depleted as the gate is appropriately biased leaving no leaky neutrally-charged leaky body. Different widths (fin thickness), different gate materials, and the Vt-adjustment using different implant energies are taken into account in this paper. It is then found that different fin thicknesses do affect the electrical performance. But cobalt silicide replacing the gate poly-silicon does not show apparent benefits on n-channel FinFET.