A 0.8–2.1 GHz broadband power amplifier

Author

Wenyuan, Li ; Hai, Wang

Author_Institution

Inst. of RF- & OE-ICs, Southeast Univ., Nanjing, China

fYear

2011

fDate

25-28 Sept. 2011

Firstpage

1050

Lastpage

1053

Abstract

A broadband power amplifier operating from 0.8 GHz to 2.1 GHz is designed with 0.18 μm SiGe BiCMOS technology, which will be used in GSM, TD-SCDMA, and RFID systems. The proposed power amplifier adopted broadband matching, compensated matching, and negative feedback technique. The simulation results show that under a supply voltage of 3.3 V, the power amplifier demonstrates 35 dB power gain, 30 dBm output power, and higher than 25% power added efficiency. Gain ripple is lower than 2.5 dB and the input VSWR is better than 1.8:1 over the whole frequency band. The layout size is 2.6 mm × 1.5 mm.

Keywords

BiCMOS analogue integrated circuits; Ge-Si alloys; UHF integrated circuits; UHF power amplifiers; cellular radio; code division multiple access; radiofrequency identification; time division multiple access; wideband amplifiers; BiCMOS technology; GSM; RFID systems; SiGe; TD-SCDMA; broadband matching; broadband power amplifier; compensated matching; frequency 0.8 GHz to 2.1 GHz; gain 35 dB; global system for mobile communications; negative feedback technique; radio frequency identification; size 0.18 mum; time division-synchronous code division multiple access; voltage 3.3 V; Broadband amplifiers; Gain; Heterojunction bipolar transistors; Impedance; Impedance matching; Power amplifiers; Broadband matching networks; Broadband power amplifiers; Compensated matching; Heterojunction bipolar transistor (HBT);

fLanguage

English

Publisher

ieee

Conference_Titel

Communication Technology (ICCT), 2011 IEEE 13th International Conference on

Conference_Location

Jinan

Print_ISBN

978-1-61284-306-3

Type

conf

DOI

10.1109/ICCT.2011.6158040

Filename

6158040