Title :
Electrical properties of MOCVD HfO2 dielectric layers with polysilicon gate electrodes for CMOS applications
Author :
Date, L. ; Rittersma, Z.M. ; Massoubre, D. ; Ponomarev, Y. ; Roozeboom, F. ; Pique, D. ; van-Autryve, L. ; Van Elshocht, S. ; Caymax, M.
Author_Institution :
Appl. Mater., Meylan, France
fDate :
31 March-1 April 2003
Abstract :
Electrical properties of MOS capacitors using MOCVD HfO2 as gate dielectric have been investigated. A 900°C 1s activation anneal of Ph-doped 680°C-RTCVD demonstrated a good compatibility with high-k layers. The best MOS capacitor is obtained with EOT=1.93 nm and Jg = 1.6E-04 A/cm2 at |VFB-1| which is > 2 orders of magnitude lower than SiO2 with poly-Si gate. A minimal degradation of leakage current after 900°C activation anneal and low effect of temperature dependence reveal the thermal stability of MOCVD HfO2 gate stack. Nevertheless, upon 1000°C activation anneal only the LPCVD poly resulted in working MOS capacitor. The found leakage current was > 2 order of magnitude higher compared to a 900°C activation anneal.
Keywords :
MOCVD coatings; MOS capacitors; dielectric thin films; hafnium compounds; leakage currents; semiconductor device manufacture; thin film capacitors; 1 s; 1000 degC; 900 degC; CMOS applications; HfO2; HfO2 MOCVD dielectric layers; MOS capacitors; Si; activation anneal; advanced process technology; electrical properties; gate dielectric; high-k layers; leakage current degradation; poly-Si gate electrodes; semiconductor manufacture; temperature dependence; thermal stability; Annealing; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Leakage current; MOCVD; MOS capacitors; Temperature dependence; Thermal degradation; Thermal stability;
Conference_Titel :
Advanced Semiconductor Manufacturing Conference and Workshop, 2003 IEEEI/SEMI
Print_ISBN :
0-7803-7681-1
DOI :
10.1109/ASMC.2003.1194482
