Title :
Tunable rail-to-rail FGMOS transconductor
Author :
Miguel, José M Algueta ; Lopez-Martin, Antonio J. ; Ramirez-Angulo, Jaime ; Carvajal, Ramon G.
Author_Institution :
Dept. of Electr. & Electron. Eng., Public Univ. of Navarre, Pamplona, Spain
fDate :
May 30 2010-June 2 2010
Abstract :
A tunable CMOS transconductor is presented. Input rail-to-rail operation is achieved using floating-gate MOS (FGMOS) transistors. Tuning is also obtained using FGMOS transistors, which are biased in weak or moderate inversion to achieve precise output current scaling. A technique to set the proper transconductance value independently of process or temperature variations is also included. Measurement and simulation results using a 0.5um CMOS technology are presented to confirm all the circuits and strategies proposed.
Keywords :
CMOS integrated circuits; MOSFET; floating-gate MOS transistor; input rail-to-rail operation; tunable CMOS transconductor; tunable rail-to-rail FGMOS transconductor; CMOS technology; Circuit simulation; Linearity; MOSFETs; Railway engineering; Resistors; Transconductance; Transconductors; Tunable circuits and devices; Voltage;
Conference_Titel :
Circuits and Systems (ISCAS), Proceedings of 2010 IEEE International Symposium on
Conference_Location :
Paris
Print_ISBN :
978-1-4244-5308-5
Electronic_ISBN :
978-1-4244-5309-2
DOI :
10.1109/ISCAS.2010.5537948
