Microscopic study of random dopant fluctuation in silicon nanowire transistors using 3D simulation

Variability impact of random dopant fluctuation in nanometer-scale silicon nanowire MOSFET is assessed via TCAD numerical simulations. We have simulated ensembles of 629 devices, which differ from each other due to the physical manifestation of the dopant variability in the channel location, including the detailed microscopic pattern of a discrete sphere dopant from drain to source. Based on our study, the variations of leakage and drive currents are not great, but not negligible. Implications from random dopant fluctuation for design are also discussed.