Title :
Characterisation of silicon oxynitrides and high-k dielectric materials by angle-resolved X-ray photoelectron spectroscopy
Author :
Mack, P. ; White, R. ; Wolstenholme, J. ; Wright, A.
Author_Institution :
Thermo VG Sci., East Grinstead, UK
fDate :
31 March-1 April 2003
Abstract :
Angle-resolved X-ray photoelectron spectroscopy (ARXPS) has been used to characterise nondestructively silicon oxynitride and high-k film samples. Film thickness values and concentration profiles were determined in each case. Different chemical states of nitrogen were identified in the silicon oxynitride sample and concentration profiles and dose values for each nitrogen state were calculated. ARXPS was also used to study the difference between hafnium oxide films deposited on thermally grown silicon oxide and on HF-etched silicon. The thickness and chemistry of the interfacial layers were characterised.
Keywords :
X-ray photoelectron spectra; dielectric thin films; hafnium compounds; silicon compounds; HF-etched silicon; HfO2; SiON; angle-resolved X-ray photoelectron spectroscopy; concentration profile; hafnium oxide film; high-K dielectric material; interfacial layer; silicon oxynitride film; thermally grown silicon oxide; Chemicals; Dielectric materials; Electrochemical impedance spectroscopy; High K dielectric materials; High-K gate dielectrics; Nitrogen; Pollution measurement; Semiconductor films; Silicon; Thickness measurement;
Conference_Titel :
Advanced Semiconductor Manufacturing Conference and Workshop, 2003 IEEEI/SEMI
Print_ISBN :
0-7803-7681-1
DOI :
10.1109/ASMC.2003.1194486
