DocumentCode
3390468
Title
Effective excursion detection and source isolation with defect inspection and classification
Author
Shindo, Wataru ; Wang, Eric H. ; Akella, Ram ; Strojwas, Andrzej J.
Author_Institution
Dept. of Electron. Eng., Tohoku Univ., Sendai, Japan
fYear
1997
fDate
10-12 Sep 1997
Firstpage
146
Lastpage
149
Abstract
In this paper, new methodologies for effective process excursion monitoring and defect source isolation are proposed. We introduce a new defect classification scheme, in which relevant defect types that are likely to be caused by the same mechanism or source are grouped into a “defect family.” We demonstrate that trending by the defect family drastically improves the excursion detection efficiency without suffering noise from irrelevant benign defects. Furthermore we have developed a methodology for identifying the source of the excursion using defect type Pareto. This is based on the fact that the signature of defect type Pareto leads to the defect source information and thus possibly indicates the origin of the problem. Thus both process control and excursion source identification can be achieved simultaneously by effective defect classification
Keywords
VLSI; inspection; integrated circuit yield; probability; process control; defect classification; defect inspection; defect source information; defect type Pareto; defect types; excursion detection; process control; source isolation; Aggregates; Computerized monitoring; Inspection; Manufacturing; Operations research; Optical films; Process control; Semiconductor device noise; Systems engineering and theory; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Manufacturing Conference and Workshop, 1997. IEEE/SEMI
Conference_Location
Cambridge, MA
ISSN
1078-8743
Print_ISBN
0-7803-4050-7
Type
conf
DOI
10.1109/ASMC.1997.630723
Filename
630723
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