Title :
Intraband emission and absorption of terahertz radiation in GaAs/AlGaAs quantum wells
Author :
Ganichev, S.D. ; Danilov, S.N. ; Gerl, Ch ; Firsov, D.A. ; Vorobjev, L.E. ; Shalygin, V.A. ; Panevin, V.Yu. ; Sofronov, A.N. ; Andrianov, A.A. ; Zakhar, A.O. ; Zhukov, A.E. ; Mikhrin, V.S. ; Vasil, A.P.
Author_Institution :
Terahertz Center, Regensburg Univ., Regensburg
Abstract :
Spontaneous emission of terahertz radiation, equilibrium intraband terahertz light absorption and its temperature dependence are studied in GaAs/AlGaAs quantum well (QW) structures subjected to a lateral electric field. The emission spectrum consists of several lines we attribute to electron transitions between resonant and localized impurity states and to the electron transitions with participation of subband states.
Keywords :
III-V semiconductors; aluminium compounds; electro-optical effects; electroluminescence; gallium arsenide; semiconductor quantum wells; submillimetre wave spectra; GaAs-AlGaAs; electron transitions; emission spectrum; intraband absorption; intraband emission; lateral electric field; light absorption; localized impurity states; quantum wells; resonant states; spontaneous emission; subband states; temperature dependence; terahertz radiation; Absorption; Electric variables measurement; Gallium arsenide; Performance evaluation; Physics; Quantum cascade lasers; Resonance; Semiconductor impurities; Submillimeter wave measurements; Wavelength measurement; Intraband light absorption; lateral electric field; quantum wells; resonant impurity states; spontaneous emission;
Conference_Titel :
Infrared and Millimeter Waves, 2007 and the 2007 15th International Conference on Terahertz Electronics. IRMMW-THz. Joint 32nd International Conference on
Conference_Location :
Cardiff
Print_ISBN :
978-1-4244-1438-3
DOI :
10.1109/ICIMW.2007.4516654
